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V20M120M-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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Datasheet Details

Part number: V20M120M-E3
Manufacturer: Vishay ↗
File Size: 93.72 KB
Datasheet: V20M120M-E3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

V20M120M-E3 Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 V20M120M PIN 1 PIN 3 PIN 2 CASE.

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Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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