V20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ul.

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Datasheet Specifications

Part number: V20100S-E3
Manufacturer: Vishay ↗
File Size: 212.08 KB
Datasheet: V20100S-E3-Vishay.pdf
Description: High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max

V20100S-E3 Distributors

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V20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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