V20100S High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V20100S, VI20100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A .

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Datasheet Specifications

Part number: V20100S
Manufacturer: Vishay ↗
File Size: 140.90 KB
Datasheet: V20100S_Vishay.pdf
Description: High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: For definitions o

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 100 V IFSM VF at IF = 20 A 250 A 0.69 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Single die

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V20100S High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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