V20M100M-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V20M100M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A T.

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Datasheet Specifications

Part number: V20M100M-E3
Manufacturer: Vishay ↗
File Size: 96.07 KB
Datasheet: V20M100M-E3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 V20M100M P

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A (TA = 125 °C) TJ max. Package 2 x 10 A 100 V 110 A 0.67 V 175 °C TO-220AB Diode variations Common cat

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V20M100M-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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