Datasheet4U.com

V20M100M-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

📥 Download Datasheet

V20M100M-E3 Datasheet Preview — Preview of V20M100M-E3 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: V20M100M-E3
Manufacturer: Vishay ↗
File Size: 96.07 KB
Datasheet: V20M100M-E3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

V20M100M-E3 Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 V20M100M PIN 1 PIN 3 PIN 2 CASE.

📁 Related Datasheet

V2000 - Ambient Light Sensor and Proximity Sensor (Sensortek)
V200CH8 - Metal-Oxide Varistors (Littelfuse)
V200ME01-LF - VCOs (Z-Communications)
V200ME07-LF - OSCILLATOR (Z-Communications)
V200ML01 - VOLTAGE CONTROLLED OSCILLATOR (ETC)
V200O1-P01 - TFT LCD Module (CHI MEI)
V201B1-L01 - TFt LCD (CHI MEI)
V201B1-L02 - TFT LCD Module (Chi Mei)

📌 All Tags

Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay V20M100M-E3-like datasheet

V20M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20M120M-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20100S - High-Voltage Trench MOS Barrier Schottky Rectifier
V20100S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier

V20M100M-E3 Stock/Price