V10K60DU Trench MOS Barrier Schottky Rectifier

Vishay

V10K60DU Description

www.vishay.com V10K60DU Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V .

V10K60DU Features

* Trench MOS Schottky technology Available
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q101 qualified available - Automotive ordering code: base P/NHM3

V10K60DU Applications

* For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. Models Available PRIMARY CHARACTERISTICS IF(AV) 2x5A VRRM IFSM VF at IF = 5 A (TA = 125 °C) 60 V 100 A 0.48 V TJ max. 150 °C Package FlatPAK 5 x 6 Circuit configuration Sepa

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Datasheet Details

Part number: V10K60DU
Manufacturer: Vishay ↗
File Size: 131.02 KB
Datasheet: V10K60DU-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay

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