V10D100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V10D100C-M3, V10D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V a.

📥 Download Datasheet

V10D100C-M3 Datasheet Preview — Preview of V10D100C-M3 PDF

Datasheet Specifications

Part number: V10D100C-M3
Manufacturer: Vishay ↗
File Size: 92.97 KB
Datasheet: V10D100C-M3-Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology generation 2
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application. MECHANICAL DATA Case: TO-263AC (SMPD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - hal

V10D100C-M3 Distributors

📁 Related Datasheet

V10-A500X V10-H08X V10-H14X V10-H22X V10-H30X V1000LA160B

📌 All Tags

V10D100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay V10D100C-M3-like datasheet