V10D170C Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V10D170C Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series K 1 2 Top View .

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Datasheet Specifications

Part number: V10D170C
Manufacturer: Vishay ↗
File Size: 106.17 KB
Datasheet: V10D170C-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.7 mm Available
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q101 qualified available
* Material categorizati

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 5.0 A 170 V 100 A VF at IF = 5.0 A (TA = 125 °C) 0.67 V TJ max. Package 175 °C SMPD (TO-263AC) Circuit configu

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V10D170C Trench MOS Barrier Schottky Rectifier Vishay

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