V10150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V10150C, VI10150C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 at IF = 3 .

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Datasheet Specifications

Part number: V10150C
Manufacturer: Vishay ↗
File Size: 132.76 KB
Datasheet: V10150C_Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPICAL APPLI

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5 A TJ max. Package 2 x 5.0 A 150 V 60 A 0.69 V 150 °C TO-220AB, TO-262AA Diode variation Common cathode

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V10150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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