V10150S High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V10150S, VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A .

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Datasheet Specifications

Part number: V10150S
Manufacturer: Vishay ↗
File Size: 132.24 KB
Datasheet: V10150S_Vishay.pdf
Description: High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 150 V IFSM VF at IF = 10 A 120 A 0.69 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Single MEC

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V10150S High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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