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SiHF830S Power MOSFET

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Description

www.vishay.com IRF830S, SiHF830S, IRF830L, SiHF830L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.(nC) Qgs (nC) Qgd (n.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Surface mount
* Available in tape and reel
* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* Fast switching
* Ease of paralleling Available
* Simple drive requirements
* Material categorization: for definitions o

Applications

* because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF830S-GE3 IRF830SPbF D2PAK (TO-263) SiHF830STRL-GE3

SiHF830S Distributors

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SiHF830 SiHF830A SiHF830AL SiHF830AS SiHF820 SiHF820A

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SiHF830S Power MOSFET Vishay
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