Description
www.vishay.com IRF830S, SiHF830S, IRF830L, SiHF830L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.(nC) Qgs (nC) Qgd (n.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
Features
* Surface mount
* Available in tape and reel
* Dynamic dV/dt rating
* Repetitive avalanche rated
Available
* Fast switching
* Ease of paralleling
Available
* Simple drive requirements
* Material categorization: for definitions o
Applications
* because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free Lead (Pb)-free
Note a. See device orientation. D2PAK (TO-263) SiHF830S-GE3 IRF830SPbF
D2PAK (TO-263) SiHF830STRL-GE3