SiHF830 Power MOSFET

Vishay Siliconix

Description

Power MOSFET IRF830, SiHF830 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 38.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHF830
Manufacturer: Vishay ↗ Siliconix
File Size: 153.57 KB
Datasheet: SiHF830_VishaySiliconix.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Available RoHS

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF830PbF SiHF830-E3 IRF830 SiHF830 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBO

SiHF830 Distributors

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SiHF830 Power MOSFET Vishay Siliconix

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