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SiHF820 Power MOSFET

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Description

Power MOSFET IRF820, SiHF820 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 24.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Available RoHS

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF820PbF SiHF820-E3 IRF820 SiHF820 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBO

SiHF820 Distributors

📁 Related Datasheet

SiHF820L SiHF820S SiHF830L SiHF830S SiHF840L SiHF8N50D

📌 All Tags

SiHF820 Power MOSFET Vishay Siliconix
Vishay Siliconix SiHF820-like datasheet
SiHF820A
SiHF820AL
SiHF820AS
SiHF830
SiHF830A