Datasheet4U Logo Datasheet4U.com

AN601 - Unclamped Inductive Switching Rugged MOSFETs

Datasheet Summary

Features

  • 00 400 600 800 1000 and A r = = = the active chip area (where heat originates) t.

📥 Download Datasheet

Datasheet preview – AN601

Datasheet Details

Part number AN601
Manufacturer Vishay Siliconix
File Size 131.05 KB
Description Unclamped Inductive Switching Rugged MOSFETs
Datasheet download datasheet AN601 Datasheet
Additional preview pages of the AN601 datasheet.
Other Datasheets by Vishay Siliconix

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr AN601 Vishay Siliconix Unclamped Inductive Switching Rugged MOSFETs For Rugged Environments The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents when subjected to unclamped inductive switching. Historically, MOSFET manufacturers chose to quantify ruggedness, not based principally on individual performance, but rather on comparative performance with other manufacturers. Siliconix has optimized the cell structure of power MOSFETs, resulting in a new class of extremely rugged devices. Today’s avalanche-rated MOSPOWER FET exhibits a ruggedness that far exceeds the performance of any power MOSFET of earlier years.
Published: |