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VS4559MS N+P-Channel Advanced Power MOSFET

VS4559MS Description

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Description VS4559AS designed by the trench processing techniques to achieve extremely low on-resistance.

VS4559MS Features

* N-CH: 60V/8A,RDS(ON)=35mΩ
* P-CH: -60V/-7.5A,RDS(ON)=75mΩ
* Low On-Resistance
* 150°C Operating Temperature
* Fast Switching

VS4559MS Applications

* Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current① Mounted on Large Heat Sink TC =25°C

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Datasheet Details

Part number
VS4559MS
Manufacturer
Vanguard Semiconductor
File Size
308.12 KB
Datasheet
VS4559MS-VanguardSemiconductor.pdf
Description
N+P-Channel Advanced Power MOSFET

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📌 All Tags

N +P-Channel Advanced Power MOSFET Vanguard Semiconductor
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