VS4559MS N+P-Channel Advanced Power MOSFET

Vanguard Semiconductor

Description

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Description VS4559AS designed by the trench processing techniques to achieve extremely low on-resistance.

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Datasheet Specifications

Part number: VS4559MS
Manufacturer: Vanguard Semiconductor
File Size: 308.12 KB
Datasheet: VS4559MS-VanguardSemiconductor.pdf
Description: N+P-Channel Advanced Power MOSFET

Features

* N-CH: 60V/8A,RDS(ON)=35mΩ
* P-CH: -60V/-7.5A,RDS(ON)=75mΩ
* Low On-Resistance
* 150°C Operating Temperature
* Fast Switching

Applications

* Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current① Mounted on Large Heat Sink TC =25°C

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VS4559MS N +P-Channel Advanced Power MOSFET Vanguard Semiconductor

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