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VBM2611 P-Channel MOSFET

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Description

VBM2611 P-Channel 60V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.012 at VGS = - 10 V 0.015 at VGS = - 4.5 V .

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Datasheet Specifications

Part number
VBM2611
Manufacturer
VBsemi
File Size
317.15 KB
Datasheet
VBM2611-VBsemi.pdf
Description
P-Channel MOSFET

Features

* TrenchFET® Power MOSFET

Applications

* DC/DC Primary Switch RoHS COMPLIANT S G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)c Pulsed Drain Current Avalanche Current Si

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