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VBM2102M P-Channel MOSFET

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Description

VBM2102M P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration -100 V 167 mΩ .

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Datasheet Specifications

Part number
VBM2102M
Manufacturer
VBsemi
File Size
402.39 KB
Datasheet
VBM2102M-VBsemi.pdf
Description
P-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

Applications

* Power Switch
* Load Switch in High Current Applications
* DC/DC Converters G GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150

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