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VBM1201K N-Channel MOSFET

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Description

VBM1201K N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS =.

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Datasheet Specifications

Part number
VBM1201K
Manufacturer
VBsemi
File Size
835.96 KB
Datasheet
VBM1201K-VBsemi.pdf
Description
N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested

Applications

* Primary Side Switch G GD S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC

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