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VBM1104S N-Channel MOSFET

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Description

VBM1104S www.VBsemi.com N-Channel 100-V (D-S) Super Trench Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration TO.

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Datasheet Specifications

Part number
VBM1104S
Manufacturer
VBsemi
File Size
268.03 KB
Datasheet
VBM1104S-VBsemi.pdf
Description
N-Channel MOSFET

Features

* Super Trench technology Power MOSFET
* Excellent gate charge x Rds (on) product(FOM)
* Very low on-resfistance Rds (on)

Applications

* Isolated DC/DC Converters D Top View GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °Ca TC = 125 °C ID Continuous Source Current (Diode C

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