The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
VBL2610N
P-Channel 60-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 60
0.064 at V GS = - 10 V
0.077 at VGS = - 4.5 V
ID (A) - 30 - 28
Qg (Typ) 12
FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested
APPLICATIONS • Load Switch
S
D2PAK
(TO-263)
G
G D S
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 100 °C
ID
- 30 - 20
Pulsed Drain Current
IDM
- 90
A
Continuing Source Current (Diode Conduction)
IS
- 28
Avalanche Current
IAS
- 31
Single Pulse Avalanche Energy Maximum Power Dissipation
L = 0.1 mH
EAS
TC = 25 °C TA = 25 °C
PD
7.
VBL2610N Datasheet
