CHA3667aQDG Datasheet (United Monolithic Semiconductors)

CHA3667aQDG, 7-20GHz Medium Power Amplifier

The CHA3667aQDG is a wide band monolithic medium power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The circuit is manufactured with a PowerpHEMT process, 0.15µm gate length, via hole through the substrate.

It is ESD protected on RF p

CHA3667aQDG Features

* Broadband performance 7-20GHz

* Self-biased

* 23dB gain @ 2.7dB noise figure

* 20dBm Output power @1dBcp

* DC power consumption, 175mA @ 4.2V

* 24L-QFN4X4 SMD package

* MSL1 UMS A3667A YYWW RFin Vd RFout Main Characteristics Tamb = +25°C, Vd= 4.2V Symbol Paramet