CHA3512-99F - Low Noise Digital Variable Amplifier

Product Overview

United Monolithic Semiconductors

Datasheet Details

Part number	CHA3512-99F
Manufacturer	United Monolithic Semiconductors
File Size	510.40 KB
Description	Low Noise Digital Variable Amplifier
Datasheet	CHA3512-99F Datasheet
Additional preview pages of the CHA3512-99F datasheet.

Product details

Description

The CHA3512-99F is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier.

Features

Performances: 6-18GHz.
23dBm saturated output power.
16dB gain.
1 bit attenuator for 20dB dynamic range.
DC power consumption: 210mA @ 4.5V.
Chip size: 4.27 x 2.46 x 0.1mm 20dB state Typical on wafer Measurements Gain versus attenuation states Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Fop Operating frequency range 6 18 G Small signal gain @ Attenuator state 0dB 16 Psat Saturated Output power @ Attenuator state 0dB 23 ATT dyn Att.

📁 Similar Datasheet

CHA3080-98F - 71 ~ 76 GHz Medium Power Amplifier (UMS)
CHA-20NF - (CHA-20xx) Coaxial Attenuators (Component General)
CHA-20NM - (CHA-20xx) Coaxial Attenuators (Component General)
CHA-20NMF - (CHA-20xx) Coaxial Attenuators (Component General)
CHA-20SF - (CHA-20xx) Coaxial Attenuators (Component General)
CHA-20SM - (CHA-20xx) Coaxial Attenuators (Component General)
CHA-20SMF - (CHA-20xx) Coaxial Attenuators (Component General)
CHA02016 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)

Other Datasheets by United Monolithic Semiconductors

CHA3512 - GaAs Monolithic Microwave
CHA3511 - GaAs Monolithic Microwave
CHA3511-99F - Amplifier
CHA3513 - GaAs Monolithic Microwave
CHA3513-99F - 3-bit Digital Variable Amplifier
CHA3514 - GaAs Monolithic Microwave

Published: Jan 26, 2025 |