CHA3512 - GaAs Monolithic Microwave

Product Overview

United Monolithic Semiconductors

Datasheet Details

Part number	CHA3512
Manufacturer	United Monolithic Semiconductors
File Size	356.24 KB
Description	GaAs Monolithic Microwave
Datasheet	CHA3512 Datasheet
Additional preview pages of the CHA3512 datasheet.

Product details

Description

The CHA3512 is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier.

Features

Performances: 6-18GHz.
23dBm saturated output power.
16dB gain.
1 bit attenuator for 20dB dynamic range.
DC power consumption: 210mA @ 4.5V.
Chip size: 4.27 x 2.46 x 0.1mm 0dB state 20dB state Typical on wafer Measurements Gain versus attenuation states Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 18 GHz G Small signal gain @ Attenuator state 0dB 16 dB Psat Saturated Output power @ Attenuator state 0.

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Published: Mar 4, 2016 |