CHA3511 - GaAs Monolithic Microwave

Product Overview

United Monolithic Semiconductors

Part number	CHA3511
Manufacturer	United Monolithic Semiconductors
File Size	266.76 KB
Description	GaAs Monolithic Microwave
Datasheet	CHA3511 Datasheet
Additional preview pages of the CHA3511 datasheet.

The CHA3511 is composed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier.

Wide Band: 6-18GHz 16dB gain 39dB isolation 22 dBm saturated output power DC power consumption, 190mA @ 4.5V Chip size: 3.55 x 2.30 x 0.1mm Main Characteristics dBS21 (dB) Typical on wafer Measurements Gain versus switch states 30 20 10 0 -10 -20 -30 -40 -50 -60 2 4 6 8 10 12 14 16 18 20 Frequency GHz Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Small signal gain @ Switch on ISO Delta Gain (1) Psat Saturated Output power @Switch on Min Typ Max Unit 6 18 GHz 15 16 dB.

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Published: Mar 4, 2016 |