TPH3206PSB Datasheet (Transphorm)

TPH3206PSB, 650V GaN FET

The TPH3206PSB 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device.

It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower g

TPH3206PSB Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient over