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TPH3206L - 650V GaN FET

Description

The TPH3206L Series 650V, 150mΩ Gallium Nitride (GaN) FETs are normally-off devices.

offering superior reliability and performance.

Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on).

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Datasheet preview – TPH3206L

Datasheet Details

Part number TPH3206L
Manufacturer Transphorm
File Size 1.48 MB
Description 650V GaN FET
Datasheet download datasheet TPH3206L Datasheet
Additional preview pages of the TPH3206L datasheet.

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Full PDF Text Transcription

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650V GaN FET PQFN Series TPH3206L Series Not recommended for new designs –see TP65H150LSG Description The TPH3206L Series 650V, 150mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
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