TPH3205ESBET - 650V GaN FET

The TPH3205ESBET by Transphorm is a 650V GaN FET. Below is the official datasheet preview.

Datasheet Details

Part number	TPH3205ESBET
Manufacturer	Transphorm
File Size	1.31 MB
Description	650V GaN FET
Datasheet	TPH3205ESBET-Transphorm.pdf
Additional preview pages of the TPH3205ESBET datasheet.

TPH3205ESBET Product details

Description

The TPH3205ESBET 600V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device. offering superior reliability and performance. AN0009: Recommended External Circuitry for GaN FETs AN0003: Printed Circuit Board Layout and Prob

Features

JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Intrinsic lifetime tests.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoH.

📁 TPH3205ESBET Similar Datasheet

TPH3300CNH - Silicon N-channel MOSFET (Toshiba)
TPH37.5A - Current Transducers (Topstek)
TPH37.5A-LTC - Current Transducers (Topstek)
TPH3R003PL - Silicon N-channel MOSFET (Toshiba)
TPH3R203NL - Silicon N-channel MOSFET (Toshiba)
TPH3R506PL - Silicon N-channel MOSFET (Toshiba)
TPH3R704PL - Silicon N-channel MOSFET (Toshiba)
TPH3R70APL - Silicon N-channel MOSFET (Toshiba)

Other Datasheets by Transphorm

TPH3205WS - 600V Cascode GaN FET
TPH3205WSB - 650V GaN FET
TPH3202L - 600V GaN FET
TPH3202P - 600V GaN FET
TPH3206L - 650V GaN FET
TPH3206PD - 600V GaN FET

Published: Apr 29, 2019 |