Datasheet4U Logo Datasheet4U.com

TPH3205WSB - 650V GaN FET

Description

The TPH3205WSB 650V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device.

offering superior reliability and performance.

Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Intrinsic lifetime tests.

📥 Download Datasheet

Datasheet preview – TPH3205WSB

Datasheet Details

Part number TPH3205WSB
Manufacturer Transphorm
File Size 1.25 MB
Description 650V GaN FET
Datasheet download datasheet TPH3205WSB Datasheet
Additional preview pages of the TPH3205WSB datasheet.

📁 Similar Datasheet

  • TPH3300CNH - Silicon N-channel MOSFET (Toshiba)
  • TPH37.5A - Current Transducers (Topstek)
  • TPH37.5A-LTC - Current Transducers (Topstek)
  • TPH3R003PL - Silicon N-channel MOSFET (Toshiba)
  • TPH3R203NL - Silicon N-channel MOSFET (Toshiba)
  • TPH3R506PL - Silicon N-channel MOSFET (Toshiba)
  • TPH3R704PL - Silicon N-channel MOSFET (Toshiba)
  • TPH3R70APL - Silicon N-channel MOSFET (Toshiba)
  • TPH0303DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
  • TPH0305DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
Other Datasheets by Transphorm

Full PDF Text Transcription

Click to expand full text
650V GaN FET in TO-247 (source tab) TPH3205WSB Not recommended for new designs—see TP65H050WS Description The TPH3205WSB 650V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Published: |