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TP65H035G4WS SuperGaN FET

TP65H035G4WS Description

TP65H035G4WS 650V SuperGaN™ FET in TO-247 (source tab) .
The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform.

TP65H035G4WS Features

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Enhanced inrush current capability
* Very low QRR
* Reduced crossover loss Benefits
* Enable

TP65H035G4WS Applications

* Datacom
* Broad industrial
* PV inverter
* Servo motor Key Specifications VDSS (V) V(TR)DSS (V) RDS(on)eff (mΩ) max
* 650 725 41 QRR (nC) typ 150 QG (nC) typ 22
* Dynamic on-resistance; ; see Figures 18 and 19 Cascode Schematic Symbol Apr. 28, 2020 tp65h035G4ws.1 C

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Datasheet Details

Part number
TP65H035G4WS
Manufacturer
Transphorm
File Size
1.32 MB
Datasheet
TP65H035G4WS-Transphorm.pdf
Description
SuperGaN FET

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