TRS6E65H - SiC Schottky Barrier Diode

Toshiba

Datasheet Details

(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 17 nC (typ. ) (4) Low reverse current: IR = 1.1 µA (typ. ) 3. Packaging and Internal Circuit TO-220-2L TRS6E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-05 2023-04-11 Rev.1.0 TRS6E65H 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Note Rating Unit.

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Published: Feb 28, 2025 |