TRS10E65C SiC Schottky Barrier Diode

Toshiba

Description

SiC Schottky Barrier Diode TRS10E65C 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Suppl.

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Datasheet Specifications

Part number: TRS10E65C
Manufacturer: Toshiba ↗
File Size: 172.41 KB
Datasheet: TRS10E65C-Toshiba.pdf
Description: SiC Schottky Barrier Diode

Features

* (1) Forward DC current: IF(DC) = 10 A (2) Repetitive peak reverse voltage: VRRM = 650 V 3. Packaging and Internal Circuit TRS10E65C 1: Cathode 2: Anode TO-220-2L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive pea

Applications

* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies

TRS10E65C Distributors

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TRS10E65C SiC Schottky Barrier Diode Toshiba

Toshiba TRS10E65C-like datasheet