Datasheet Specifications
- Part number
- TRS10E65F
- Manufacturer
- Toshiba ↗
- File Size
- 288.81 KB
- Datasheet
- TRS10E65F-Toshiba.pdf
- Description
- SiC Schottky Barrier Diode
Description
SiC Schottky Barrier Diode TRS10E65F 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Suppl.
Features
* (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 83A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ. ) (4) The reverse current is small. : IR = 0.5 µA (Typ. ) 3. Packaging and Internal Circuit TRS10E65F TO-220-2L 1: Cathode 2: Anode ©2016-2018 Toshiba ElApplications
* Power Factor CorrectionTRS10E65F Distributors
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