TRS12A65F SiC Schottky Barrier Diode

Toshiba

TRS12A65F Description

SiC Schottky Barrier Diode TRS12A65F 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Suppl.

TRS12A65F Features

* (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 92 A (max) (3) Low junction capacitance: Cj = 44 pF (typ. ) (4) Low reverse current: IR = 0.6 µA (typ. ) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS12A65F TO-220F-2L 1: Cathode 2

TRS12A65F Applications

* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies

📥 Download Datasheet

TRS12A65F Datasheet Preview — Preview of TRS12A65F PDF

Datasheet Details

Part number: TRS12A65F
Manufacturer: Toshiba ↗
File Size: 253.05 KB
Datasheet: TRS12A65F-Toshiba.pdf
Description: SiC Schottky Barrier Diode

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