TRS6A65F - SiC Schottky Barrier Diode

Toshiba

Datasheet Details

(1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 52 A (3) Low junction capacitance: Cj = 22 pF (typ. ) (4) Low reverse current: IR = 0.3 µA (typ. ) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS6A65F TO-220F-2L 1: Cathode 2: Anode ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-11 2020-09-28 Rev.5.0 TRS6A65F 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T.

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Published: Feb 28, 2025 |