TRS6E65F - SiC Schottky Barrier Diode

Toshiba

Datasheet Details

(1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 55A (Max) (3) The junction capacitance is small : Cj = 22 pF (Typ. ) (4) The reverse current is small. : IR = 0.3 µA (Typ. ) 3. Packaging and Internal Circuit TRS6E65F TO-220-2L 1: Cathode 2: Anode ©2016-2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-07 2018-06-27 Rev.2.0 TRS6E65F 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristi.

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Published: Feb 28, 2025 |