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TRS4V65H SiC Schottky Barrier Diode

TRS4V65H Description

SiC Schottky Barrier Diode TRS4V65H 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Suppli.

TRS4V65H Features

* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 12nC (typ. ) (4) Low reverse current: IR = 0.6 µA (typ. ) 3. Packaging and Internal Circuit DFN8x8 TRS4V65H 1, 2: N. C. 3, 4: Anode 5: Cathode (heatsink) ©2023 1 Toshiba Electronic De

TRS4V65H Applications

* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies

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SiC Schottky Barrier Diode Toshiba
Toshiba TRS4V65H-like datasheet