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TRS4E65H SiC Schottky Barrier Diode

TRS4E65H Description

SiC Schottky Barrier Diode TRS4E65H 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Suppli.

TRS4E65H Features

* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 12 nC (typ. ) (4) Low reverse current: IR = 0.6 µA (typ. ) 3. Packaging and Internal Circuit TO-220-2L TRS4E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corpo

TRS4E65H Applications

* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies

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SiC Schottky Barrier Diode Toshiba
Toshiba TRS4E65H-like datasheet