Datasheet Specifications
- Part number
- TPN8R903NL
- Manufacturer
- Toshiba ↗
- File Size
- 234.53 KB
- Datasheet
- TPN8R903NL-Toshiba.pdf
- Description
- MOSFET
Description
TPN8R903NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPN8R903NL 1.Applications * * Switching Voltage Regulators DC-DC Converters 2..
Features
* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.5 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 10.2 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal CircuiTPN8R903NL Distributors
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