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TPN11006NL - MOSFET

Features

  • (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 6.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain curre.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPN11006NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPN11006NL 1. Applications • • • Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 6.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4.
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