TPN14006NH - MOSFET

Name: TPN14006NH
SKU: TPN14006NH-835951

Toshiba

The TPN14006NH by Toshiba is a MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	TPN14006NH
Manufacturer	Toshiba
File Size	226.90 KB
Description	MOSFET
Datasheet	TPN14006NH-Toshiba.pdf
Additional preview pages of the TPN14006NH datasheet.

(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 5.5 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain.

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Published: Aug 29, 2014 |