TPCP8608 Datasheet - Toshiba

TPCP8608, Silicon PNP Transistor

Bipolar Transistors Silicon PNP Epitaxial Type TPCP8608 TPCP8608 1.

Features

* (1) High DC current gain: hFE = 200 to 500 (VCE = -2 V, IC = -0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.18 V (max) (IC = -1.0 A, IB = -33 mA) (3) High-speed switching: tf = 90 ns (typ.
) (IC =1.0 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4.

Applications

* High-Speed Switching

TPCP8608-Toshiba.pdf