TPCP8607 Datasheet - Toshiba

TPCP8607, Silicon PNP Transistor

Bipolar Transistors Silicon PNP Epitaxial Type TPCP8607 TPCP8607 1.

Features

* (1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA) (3) High-speed switching: tf = 65 ns (typ.
) (IC = -0.75 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitte

Applications

* High-Speed Switching

TPCP8607-Toshiba.pdf