TPCP8606 Datasheet - Toshiba

TPCP8606, Silicon PNP Transistor

Bipolar Transistors Silicon PNP Epitaxial Type TPCP8606 TPCP8606 1.

Features

* (1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3) High-speed switching: tf = 35 ns (typ.
) (IC = -1.2 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter

Applications

* High-Speed Switching

TPCP8606-Toshiba.pdf