TPCP8605 Datasheet - Toshiba

TPCP8605, Silicon PNP Transistor

Bipolar Transistors Silicon PNP Epitaxial Type TPCP8605 TPCP8605 1.

Features

* (1) High DC current gain: hFE = 200 to 500 (VCE = -2 V, IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA) (3) High-speed switching: tf = 60 ns (typ.
) (IC = -1.6 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4

Applications

* High-Speed Switching

TPCP8605-Toshiba.pdf