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TPC6012 N-Channel MOSFET

TPC6012 Description

TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPC6012 Notebook PC Applications Portable Equipment Applications .

TPC6012 Features

* serious property damage or serious public impact

TPC6012 Applications

* Portable Equipment Applications
* Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ. ) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) Unit: mm

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N-Channel MOSFET Toshiba
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