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TPC6109-H P-Channel MOSFET

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Description

TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6109-H High-Efficiency DC-DC Converter Applicatio.

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Features

* e reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
* Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fai

Applications

* Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ. ) (VDS =
* 10 V) High forward transfer admittance: |Yfs| = 8.0 S (typ. ) Low leakage current: IDSS =
* 10 μA (max) (VDS =
* 30 V)

TPC6109-H Distributors

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TPC6109-H P-Channel MOSFET Toshiba
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