TPC6009-H Datasheet - Toshiba Semiconductor

TPC6009-H, MOSFETs

(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 1.0 nC (typ.) Low drain-source on-resistance: RDS(ON) = 66 m...

TPC6009-H-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPC6009-H

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

225.20 KB

Description:

Mosfets.

TPC6009-H Description

Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 1.0 nC (typ.) Low drain-source on-resistance: RDS(ON) = 66 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packagi

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TPC6009-H MOSFETs Toshiba Semiconductor

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