Datasheet Details
Part number:
TPC6001
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
200.66 KB
Description:
N-channel mosfet.
TPC6001_ToshibaSemiconductor.pdf
TPC6001_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
TPC6001
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
200.66 KB
Description:
N-channel mosfet.
TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6001 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate volta
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