TK20H50C Silicon N-Channel MOSFET

Toshiba

Description

TK20H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK20H50C Switching Regulator Applications Unit: mm z Low drain

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Datasheet Specifications

Part number: TK20H50C
Manufacturer: Toshiba ↗
File Size: 209.87 KB
Datasheet: TK20H50C_Toshiba.pdf
Description: Silicon N-Channel MOSFET

Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 0.23 Ω (typ. ) z High forward transfer admittance : |Yfs| = 14 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°

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TK20H50C Silicon N-Channel MOSFET Toshiba

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