Datasheet Specifications
- Part number
- TK20E60U
- Manufacturer
- Toshiba ↗
- File Size
- 271.68 KB
- Datasheet
- TK20E60U_Toshiba.pdf
- Description
- Silicon N-Channel MOSFET
Description
TK20E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60U 1.Applications * Switching Voltage Regulators 2..
Features
* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ. ) High forward transfer admittance: |Yfs| = 12 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: DrainTK20E60U Distributors
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